| 学術論文 |
| No. | 論文タイトル（題目） URL, 誌名(出版物名), 巻( 号), 開始ページ- 終了ページ, 出版年月（日）, DOI
|
| 1 | Isothermal capacitance transient spectroscopy of psueudomorphic high-electron-mobility transistors , Appl. Phys. Lett., 82, 3339- 3341, 2003年05月12日,
|
| 2 | Optimization of process conditiuons of selective epitaxial growth for elevated source/drain CMOS transistor , J. Crystal Growth, 243, 87- 93, 2002年01月01日,
|
| 3 | A chemical Mechanism for determining the influence of boron on silicon epitaxial growth , Jpn. J. Appl. Phys., 40, 6202- 6207, 2001年11月01日,
|
| 4 | Surface defect formation in epitaxial Si growth on Boron-doped substrates by ultrahigh vacuum chemical vapor deposition , Jpn. J. Appl. Phys., 40, L1051- L1053, 2001年10月01日,
|
| 5 | Junction capacitance reduction due to self-aligned pocket implantation in elevated source/drain MOSFETs , IEEE Trans. Electron Devices, 48, 1969- 1974, 2001年09月01日,
|
| 6 | A dual-gate complementary metal-oxide-semiconductor technology with novel self-aligned pocket implantation by taking advantage of elevated source/drain congigurations , Jpn. J. Appl. Phys., 40, 2611- 2615, 2001年04月01日,
|
| 7 | Low thermal budget surface cleaning after dry etching for selective silicon epitaxial growth , J. Crystal Growth, 226, 443- 450, 2001年01月01日,
|
| 8 | Improvement of alignment tolerance against contact hole etching by growing silicon selective epitaxial layer on hole bottom , Microelectronic Engineering, , 281- 287, 2001年01月01日,
|
| 9 | Formation of selective epitaxially grown silicon with a flat edge by ultra-high vacuum chemical vapor deposition , J. Crystal Growth 233, , 82- 87, 2001年01月01日,
|
| 10 | Selective epitaxial growth by ultrahigh-vacuum chemical vapor deposition with alternating gas , Jpn. J. Appl. Phys., 39, 6139- 6142, 2000年12月01日,
|
| 11 | Effects of oxygen vacancy diffusion on leakage characteristics of Pt/(Ba0.5Sr0.5)TiO3/Pt capacitor , Jpn. J. Appl. Phys., 39, L416- L419, 2000年05月01日,
|
| 12 | Parasitic resistance reduction in deep submicron dual-gate transistors with partially elevated source/drain extension regions fabricated by complementary MOS technologies , Jpn. J. Appl. Phys., 39, 387- 389, 2000年02月01日,
|
| 13 | Epitaxial Si1-xGex grown into fine contact hole by ultra-vacuum chemical vapor deposition , Materials Science & Engineering, B68, 171- 174, 2000年01月01日,
|
| 14 | Gain switching of an asymmetric double quantum well , Appl. Phys. Lett., 57, 2672- 2674, 1999年12月17日,
|
| 15 | Significant effects of As ion implantation on Si-selective epitaxy ultrahigh vacuum chemical vapor deposition , Jpn. J. Appl. Phys., 38, 5046- 5047, 1999年09月01日,
|
| 16 | Si deposition into fine contact holes by ultrahigh-vacuum chemical vapor deposition , Jpn. J. Appl. Phys., 38, 4045- 4046, 1999年07月01日,
|
| 17 | Drivability improvement on deep-submicron MOSFETs by elevation of source/drain regions , IEEE Electron Device Lett., , 366- 368, 1999年07月01日,
|
| 18 | Nanometer fabrication using selective thermal desorption of SiO2 induced by focused electron beams and electron beam interference fringes , J. Vacuum Science and Technology, B16, 2817- 2821, 1998年10月01日,
|
| 19 | Model of leagage charcteristics of (Ba, Sr)TiO3 thin films , Appl. Phys. Lett., 73, 954- 956, 1998年06月12日,
|
| 20 | Electron-beam-induced selective thermal decomposition of ultrathin SiO2 layers used in nanofabrication , Jpn. J. Appl. Phys., 36, 7777- 7781, 1997年12月01日,
|
| 21 | Selective thermal decomposition fo ultrathin silicon oxide layers induced by electron-stimulated oxygen desorption , Appl. Phys. Lett., 71, 1038- 1040, 1997年08月25日,
|
| 22 | Observation of oxide/Si(001)-interface during layer-by-layer oxidation by scanning reflection electron microscopy , Appl. Phys. Lett., 71, 885- 887, 1997年08月18日,
|
| 23 | Observation of selective thermal desorption of electron stimulated SiO2 with a combined scanning reflection microscope/scanning tunneling microscope , J. Appl. Phys., 82, 639- 643, 1997年07月15日,
|
| 24 | Nanofabrication using selective thermal desorption of SiO2/Si induced by electron beams , J. Vacuum Science and Technology, A15, 1493- 1498, 1997年06月01日,
|
| 25 | Effect of hydrogen molecules on growth rates of GaAs in gas source molecular beam epitaxy , J. Crystal Growth, 97, 578- 582, 1997年01月01日,
|
| 26 | Microprobe RHEED/STM combined microscopy , Surface Review and Letters, 4, 535- 538, 1997年01月01日,
|
| 27 | A combined apparatus of scanning reflection electron microscope and scanning tunneling microscope , Rev. Sci. Instrument, 68, 116- 119, 1997年01月01日,
|
| 28 | Self-organized Ge clustering on partially Ga-terminated Si(111) surfaces , J. Appl. Phys., ( 83), 205- 211, 1997年01月01日,
|
| 29 | Microstructure fabrication using oxidation on partially Ga-terminated Si(111) surfaces , Appl. Phys. Lett., 69, 1382- 1384, 1996年09月02日,
|
| 30 | Nanosturcture fabrication using the selective thermal desorprtion of SiO2 induced by electron beams , Appl. Phys. Lett., 69, 638- 640, 1996年07月29日,
|
| 31 | Surfactant-mediated epitaxy of Ge on partially Ga-terminated Si(111) surfaces , Appl. Phys. Lett., 68, 2213- 2215, 1996年04月15日,
|
| 32 | Periodical nanostructure fabricaton using electron interface fringes produced by scanning interference electron microscope , Appl. Phys. Lett., 66, 2754- 2756, 1995年05月15日,
|
| 33 | Symmetric InP mirror facets fabricated by selective chemical beam epitaxy on reactive-ion etched sidewalls , J. Crystal Growth, 150, 399- 403, 1995年01月01日,
|
| 34 | Fabrication of smooth facets of InP by selective sidewall epitaxy using CBE , Applies Surface Science, 82/83, 80- 84, 1994年01月01日,
|
| 35 | Extremely smooth vertical facets for InP formed by reactive ion etching and selective CBE regrowth , J. Crystal Growth, 145, 675- 679, 1994年01月01日,
|
| 36 | Selectively embedded growth by chemical beam epitaxy for the fabrication of InGaAs/InP double-heterostructure lasers , J. Crystal Growth, 140, 277- 281, 1994年01月01日,
|
| 37 | Threshold height for movement of C60 molecules on Si(111)-7x7 with a scanning tunneling microscope , Appl. Phys. Lett., 63, 1339- 1341, 1993年09月06日,
|
| 38 | Selective embeded growth of InGaAs/InP double-heterostructures by chemical beam epitaxy , J. Crystal Growth, 125, 502- 508, 1992年01月01日,
|
| 39 | Optical properties of InGaAs/InP double-heterostructures selectively grown by chemical beam epitaxy , J. Crystal Growth, 136, 246- 249, 1992年01月01日,
|
| 40 | Transient behavior in RHEED intensity oscillations observed in chemical beam epitaxy of InP , J. Crystal Growth, 105, 221- 226, 1990年01月01日,
|
| 41 | Characteristics of carbon incorporation in GaAs grown by gas source molecular beam epitaxy , J. Crystal Growth, 100, 5- 10, 1990年01月01日,
|
| 42 | Analysis of dynamic characteristics of double barrier diodes: a sequential tunneling approach , Superlattices and microstructures, 6, 73- 76, 1989年01月01日,
|
| 43 | Electrical and optical properties of silicon doped InP grown by gas source MBE , J. Crystal Growth, 104, 457- 462, 1989年01月01日,
|
| 44 | Gas source MBE growth of InP , J. Crystal Growth, 95, 176- 180, 1989年01月01日,
|
| 45 | Observations on intensity oscillations in reflection high-energy electron diffracton during gas source molecular beam epitaxy of InP , Appl. Phys. Lett., 53, 42- 44, 1988年07月04日,
|
| 46 | Growth mechanisms of molecular beam epitaxy of InP and GaAsxP1-x using low energy P+ ion beam , Surf. Sci., , 335- 344, 1988年01月01日,
|
| 47 | Electrical and optical properties of InP grown by MBE using P+ ion beam , J. Crystal Growth, , 215- 220, 1988年01月01日,
|
| 48 | Silicon epitaxial growth by the radical beam of glow-discharge decomposed Silane , Jpn. J. Appl. Phys., 23, L865- L867, 1984年11月,
|
| 49 | 角度分解電子エネルギー損失分光法によるSi表面の水素化に関する研究 , 学位論文, , 1- 85, 1983年03月01日,
|
| 50 | Electronic structures of the monohydride (2x1):H and the dihydride (1x1):2H Si(100) surfaces studied by angle-resolved electron-energy-loss spectroscopy , Phys. Rev. B, , 4110- 4116, 1983年01月01日,
|
| 51 | Ag/Si(111)-7x7 systems investigated by angle-resolved electron spectroscopy , Surf. Sci., , 55- 58, 1983年01月01日,
|
| 52 | Ag adsorbed surfaces on Si(111) studied by angle-resolved electron energy loss spectroscopy , Solid State Commun., , 55- 58, 1983年01月01日,
|
| 53 | Surface plasmon dispersion of Ag adsorbed Si(111) surfaces studied by angle-resolved electron energy loss spectroscopy , Jpn. J. Appl. Phys., 20, L37- L39, 1983年01月,
|
| 54 | Room temperature hydrogenation of the Si（001）2x1 surface studied by angle-resolved electron energy loss spectroscopy , Surf. Sci., 123, 18- 28, 1982年09月16日,
|
| 55 | Inelastic low energy electron diffraction measurements of hydrogen adsorbed Si(001) surafces 2x1:H and 1x1:2H , Jpn. J. Appl. Phys., 22, L263- L265, 1982年05月,
|
| 56 | Enhancement of surface plasmon excitaion by low energy electron due to surface resonance on Si(001)-2x1 , Jpn. J. Appl. Phys., 20, L189- L191, 1982年04月,
|
| 57 | Dispersion of suface-plasmon at clean Si(001)-2x1 surface , Jpn. J. Appl. Phys., 20, L745- L748, 1981年10月,
|
